Abstract
Memristor provides nonlinear response in the current-voltage characteristic and the memristance is modulated using an external voltage source. We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme. We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance. The analysis completely accounts for the memristance behavior.
Highlights
Memristive devices have received renewed interests since memory resistors called “memristors” were demonstrated in nanoscale.[1,2] Properties of memristive devices, such as memristors,[2,3,4,5,6,7,8,9,10] memcapacitors,[11,12,13,14] and meminductors,[15] depend on the history and state of the systems
We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme
We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance
Summary
Memristive devices have received renewed interests since memory resistors called “memristors” were demonstrated in nanoscale.[1,2] Properties of memristive devices, such as memristors,[2,3,4,5,6,7,8,9,10] memcapacitors,[11,12,13,14] and meminductors,[15] depend on the history and state of the systems. The significant progress has been made for the past two decades to manipulate responses of nonlinear devices using the fluctuation Such manipulation method has been applied to several systems for signal detections,[28,29,30] imaging,[31] and communications.[32] It has been reported in Refs. An alternative approach for manipulating nonlinear device responses is to utilize the “vibrational resonance36” phenomenon This approach is suitable for the circuit implementation, which has been presented more recently.[37] In Ref. 37, the original voltage source was modulated by an external voltage source with higher frequency than the original one, enabling the memristance enhancement and the enlarged hysteresis eye-openness of the current-voltage (I-V) characteristic.
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