Abstract

Summary form only given. We report pulsed and continuous-wave operation of an optically-pumped III-V VCSEL emitting at /spl lambda//spl ap/2.9 /spl mu/m. The laser consists of a 12-1/2 period GaSb/AlAsSb distributed Bragg reflector (DBR) bottom mirror, a 79-period type-II W quantum well active region [InAs/GaSb/InAs/AlSb] and a dielectric DBR top mirror. The reflection plateaus of the top and bottom mirror are centered at /spl lambda/=3.0 /spl mu/m, and the top mirror is also optimized for >80% transmission at 1.064 /spl mu/m. The cavity containing the active region is nominally one wavelength long. The first results demonstrate the feasibility of diode-pumped mid-IR VCSELs with low thresholds at high temperatures.

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