Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures

Abstract

Controlling physical properties using light or electric field, rather than magnetic field or electrical current, is of keen interest for tomorrow's energy-efficient, high-density, nonvolatile memory applications. The authors combine the effects of electric-field-induced ferroelastic strain and photoexcited delocalization for significant tuning of electronic transport in manganite-based multiferroic heterostructures. The strong correlation of these effects is essentially driven by electronic phase separation. These results provide a framework for realizing multifield tuning of phase separation in complex oxides, for advanced device physics.