Abstract
A new type of optically controllable, millimeter-wave (MMW) attenuator based on high-resistivity (high-R) silicon (Si) wafers and a layered structure is developed. A high-R float-zone Si wafer is a lossless dielectric material at microwave frequency without optical excitation. When an Si wafer is optically excited, free carriers are generated, and the Si wafer becomes a lossy dielectric. This property is combined with a layered structure to develop a simple optically tunable MMW attenuator. A more than 20 dB attenuation with a 10% bandwidth of the center frequency is obtained at W-band. The proposed structure is useful for developing low-cost attenuators and switches in the MMW region. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 9–13, 2000.
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