Abstract
The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.
Highlights
The appreciable magnetoresistance (MR) effect known as giant magnetoresistance (GMR)and tunneling magnetoresistance (TMR) appears in an artificial, nano-scale, sandwiched structure consisting of two ferromagnetic (FM) layers separated by a nonmagnetic spacer (Figure 1a).Its successful application has completely revolutionized the information industry and changed our daily life [1,2,3]
Following the underlying quantum well states (QWS) mechanism of interlayer exchange coupling (IEC) as stated earlier, we can understand from the energy’s perspective the consequence that if the spacer layer is exposed to certain photon irradiation with sufficient fluence, owing to the different density of stateslayers (DOS), the electron gas in the AFM and FM coupling states will separately go through different absorption-transition behaviors, bringing about different light-induced energy changes
The magnetics, electronics andand nanotechnology havehave triggered the birth birth of spintronics, which is marked by the discovery of the
Summary
The appreciable magnetoresistance (MR) effect known as giant magnetoresistance (GMR). Besides these direct applications of devices has been successfully applied for high-performance logic circuits [9] Besides these direct the GMR/TMR effect sensing,effect dataon storage and in the optical applications of theon. We manipulation can be realized via different methods, switching relative magnetic revisit the development and principles of the optical manipulation of the MR effect Such manipulation alignment via the all optical switching (AOS) of the magnetic layer or via tuning the IEC effect; or otherwise modulating the electronic transport of the optical responsive spacer layer. The final section can be realized via different methods, including switching the relative magnetic alignment via the all devoted to the abundant applications of those effects, including storage and sensing. At the end we present a perspective for applying the optical tunable
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
