Optically pumped spin-polarized carrier transport across Fewire∕GaAs interfaces

Abstract

Spin-selective transport of optically pumped spin-polarized electrons across 5-nm-thick Fewires∕GaAs and 5-nm-thick Fewires∕AlOx(1.5nm)∕GaAs interfaces is studied as functions of magnetic field and temperature. We find characteristic temperature dependence of the spin selectivity at the Fe∕AlOx∕p-GaAs interface, where the selectivity shows a maximum at 200 K, which we attribute to the tunneling effect of spin-polarized electrons across the AlOx layer in the Fe∕AlOx∕p-GaAs structure.