Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

Len Van Deurzen,Kazuki Nomoto,Ryan Page,Huili (Grace) Xing,Vladimir Protasenko,Debdeep Jena

doi:10.1063/5.0085365

Abstract

Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes.

Highlights

The current densities and voltages required for lasing.12,13 with these advancements, all demonstrated laser diodes emitting below 348 nm currently operate under pulsed mode, limiting their practicality
Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy
With the development of molecular beam homoepitaxy, where AlGaN films are grown on bulk AlN substrates, the optical intrinsic loss can be kept low by reducing the threading dislocation density ≈ millionfold

Summary

Introduction

The current densities and voltages required for lasing.12,13 with these advancements, all demonstrated laser diodes emitting below 348 nm currently operate under pulsed mode, limiting their practicality.14. We report the observation of laser oscillation in an optically pumped sub-300 nm AlGaN double heterostructure grown by molecular beam epitaxy on single crystal AlN by processing them into ridge-based edge-emitters.

Results

Conclusion