Abstract
We report optical excitation of space-charge and conductivity gratings in wide-bandgap semiconductors. The approach is based on the illumination of semiconductor material with an oscillating interference pattern formed of two light waves, one of which is phase modulated with frequency ω. The non-steady-state photocurrent flowing through the short-circuited semiconductor is the measurable quantity in this technique. The alternating current results from the periodic relative shifts of the photoconductivity and space charge electric field gratings which arise in the volume of the crystal under illumination. The experiments are carried out in β-Ga2O3 crystal and the main parameters of the photoinduced carriers are determined.
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