Abstract
We study the anisotropic in-plane strain in M-plane GaN films on LiAlO2 by using photoreflectance, photoluminescence, Raman, and time-resolved pump-and-probe spectroscopy. We find a partial and anisotropic relaxation of these highly strained films under intense optical pumping. The strain relaxation is observed as a redshift of the E2-Raman line and as a redshift of the fundamental interband transition energies in the photoreflectance spectra. The photoluminescence intensity in the exposed areas of the sample is significantly reduced compared to the one for unexposed areas. This observation suggests that the strain relaxation is probably due to the introduction of defects, which act as nonradiative recombination centers.
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