Optically induced hysteresis of bilateral p–i–n junctions incorporated with InAs quantum dots

Abstract

Single quantum dots have attracted much interest because they might act as hosts for future optical storage devices. We report hysteresis in the current flowing through bilateral p–i–n junctions incorporated with quantum dots under optical excitation at different wavelengths. The conductance of the n-type layer, a two-dimensional electron gas, can be modulated with optical excitation and gating quantum dots. With quasi-resonant optical excitation, the current shows a hysteresis due to the charging of the quantum dots. The device could potentially be used for single-photon detection.