Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications

Abstract

For the development of InAs/InP quantum dot (QD) lasers for 1.55 μm telecom wavelength, there are two main challenges: (1) morphological preference for quantum dashes over QDs, and (2) generally poor size uniformity of QDs (dashes). This study addresses the issues, in synchronous, by demonstrating the improved optical properties of 1.55 μm InAs/InP QDs at room temperature with excellent reproducibility. A high-density (∼4 × 1010 cm−2) dot-like morphology was initially attained via adjusting the growth parameters, albeit with a large full-width at half-maximum (FWHM) of ∼80 meV and a peak position of a wavelength longer than 1.55 μm. For improvement, the indium-flush technique was employed, which enhanced the uniformity of InAs QDs and substantially lowered the FWHM of five (single) stacked QDs to 50.9 meV (47.9 meV). This technique also blue-shifted the emission peak to 1530.2 nm (1522 nm). The InAs/InP QDs presented are appropriate for the fabrication of high-performance 1.55 μm lasers on InP (001) and, potentially, emerging light sources on the important Si (001).