Optically detected magnetic resonance studies of low-temperature InP

Abstract

We present experimental results from studies of low-temperature molecular beam epitaxially grown InP (LT InP), by optical detection of magnetic resonance (ODMR), where both the identification of defects and recombination processes can be studied simultaneously. The presence of the PIn antisites is unambiguously established, evident from the doublet hyperfine structure from the31P atom (with nuclear spin I=1/2 and 100% natural abundance). The PIn antisites are shown to be involved in strong nonradiative recombination processes, which compete with radiative ones via other defects. In addition to the PIn antisites, another defect has been detected in ODMR experiments which is shown to be a low-symmetry defect, likely a complex related to Be. Photo-excitation of the ODMR signals allows determination of the energy level positions of these defects. The results indicate that the PIn antisite is the prevailing defect governing the electronic properties of the material.