Abstract
AbstractThe influence of chemically different donor species on the nature of shallow donor states in Al0.6Ga0.4As/GaAs heterostructures has been investigated by optically detected magnetic resonance (ODMR). Previous theoretical work by Morgan predicts a triplet state for group IV donors and a singlet state for group VI donors. ODMR experiments were performed on as-grown and implanted Si-, Se-, and S-doped epitaxial layers of Al0.6Ga0.4As grown on (001) GaAs substrates. The effective-mass states are modified by the heter-oepitaxial strain in these layers. The Si donors are characterized as quasi-independent valley states. The Se and S donors have valley-orbit splitting energies (i.e. chemical shifts) of 19-20 meV . The results indicate that Si, Se, and S donors are on the lattice sites in the metastable state of DX.
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