Optically detected magnetic resonance in zinc-doped indium phosphide under uniaxial stress.

Abstract

Optically detected magnetic resonance (ODMR) of Zn-doped InP under uniaxial stress reveals the spectrum of the Zn acceptors. The zero-stress spectrum consists of a strong ODMR from native ${\mathrm{P}}_{\mathrm{In}}$ antisites. Uniaxial stress was applied in the [11\ifmmode\bar\else\textasciimacron\fi{}0] direction perpendicular to the magnetic field. With the magnetic field in the [110], a new resonance appears for a stress of 160 MPa, which sharpens and shifts as the stress is increased to 400 MPa. The anisotropy of the signal was measured by performing the experiment with the field in the [001] direction. An analysis in terms of a Hamiltonian for a spin-3/2 acceptor gives ${\mathit{g}}_{1}$=0.869(3) and ${\mathit{g}}_{2}$=0.031(2) at 400 MPa. These values are compared to those for Zn in other III-V semiconductors and to a measurement of the Luttinger parameter for InP. This observation confirms the assignment of the 0.80-eV emission in InP:Zn to ${\mathrm{P}}_{\mathrm{In}}$-Zn pairs. When this result is combined with the published result from excitation spectroscopy, the ${\mathrm{P}}_{\mathrm{In}}^{+}$/${\mathrm{P}}_{\mathrm{In}}^{2+}$ energy level is (1.1\ifmmode\pm\else\textpm\fi{}0.1) eV above the valence band.