Abstract
The substitutional oxygen defect in GaAs has been investigated with magnetic circular dichroism of the absorption, optically detected electron paramagnetic resonance, and optically detected electron-nuclear double resonance (ODENDOR). The ODENDOR spectra can be explained with an oxygen atom occupying an As site displaced from a regular lattice position along a $〈100〉$ direction. The superhyperfine interactions and spin densities for several As and Ga neighbors have been determined. The experiments support a model in which the oxygen atom is bonded to two Ga atoms and which shows similarities to the $A$ center in silicon.
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