Abstract

Optically controlled organic field effect transistors containing a binary mixture of fullerene C60 (n-semiconductor) and spiropyran (photoresponsive conductivity modulator) as the active layer were designed and fabricated. The obtained transistors demonstrated higher transfer characteristics (source-drain current), charge carrier mobility in the active layer, and response rate to an external influence than the multilayer transistor (wherein these semiconductor and photoresponsive material are in different layers), which makes them promising candidates for the design of optical memory elements.

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