Abstract
A Schottky gated field effect transistor (FET) has been prepared utilizing poly(3-alkylthiophene) containing photodissociative diphenyliodonium hexafluoroarsenate (Ph2IAsF6). Upon irradiation of light on the FET, the FET characteristic has changed drastically which can be explained in terms of enhanced carrier density and carrier mobility due to the photodissociation of Ph2IAsF6. The relation between enhancement of carrier density and that of carrier mobility has been discussed. Monolithic field effect transistors composed of poly(3-alkylthiophene) containing Ph2IAsF6 have been also proposed.
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