Abstract
We report the effects of uniaxial stress and magnetic-field perturbations and of H-D isotope substitution on luminescence at 1.151 and 1.138 eV in crystalline silicon. The two centers responsible for these luminescence systems are shown to have symmetry and atomic compositions similar to those predicted for hydrogen dimers. The centers create acceptor (-/0) levels near the conduction-band minima and are paramagnetically inactive in their neutral states. The mechanism of formation of the defects is discussed.
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