Abstract
We have studied the epitaxy, energy bandgap, and structural and optical properties of GaSbN nanostructures in the dilute antimony (Sb) limit (Sb concentration < 1%). GaSbN nanowire structures are grown on a Si substrate by plasma-assisted molecular beam epitaxy. It is observed, both theoretically and experimentally, that the incorporation of a very small amount of Sb (<1%) in GaN can substantially reduce the energy bandgap of GaN from 3.4 eV to ∼2 eV. We have further demonstrated that emission wavelengths of GaSbN nanowires can be tuned from ∼365 nm to 600 nm at room-temperature by varying the Sb incorporation. Functional GaSbN nanowire light-emitting diodes are also demonstrated, which exhibit strong emission in the deep-visible spectral range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
