Abstract
The design and measurement of a monolithically integrated optoelectronic chip consisting of two different receivers are presented. A high-speed receiver for communication including a highly sensitive, large-area avalanche photodiode builds one receiver. A data rate of 1 Gbit/s with a BER $0.35~\mu \text{m}$ CMOS technology. The performance in a wireless communication scenario with strong background irradiance is explored, and a comparison with published optoelectronic integrated receivers is given.
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