Optical waveguide formed by cubic silicon carbide on sapphire substrates

Abstract

Optical confinement in beta silicon carbide (β-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin β-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. We believe this is the first step in validating a silicon carbide optoelectronic technology.