Abstract
We have explored the effect of electronic coupling on the low temperature (∼ 6K) photoluminescence excitation spectrum observed from GaAsAlAs superlattices. In particular a decrease in the continuum contribution to the luminescence signal can be correlated with increased coupling between the ⌜ electron states. Oscillations due to the interaction of photoexcited electrons and optical phonons can be observed in the photoluminescence excitation spectrum of both type-I and type-II samples. The period of the oscillations allows a determination of the in-plane hole mass, which gets heavier as the AlAs thickness is reduced. For one sample, a 25Å-8Å GaAsAlAs superlattice, we estimate the heavy hole exciton binding energy to be ∼8.5 meV. A comparison of the observed direct ⌜-⌜ and pseudo-direct X z−⌜ transition with calculations using a rudimentary effective mass type of calculation shows surprisingly good agreement down to a period of about 12 monolayers.
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