Optical transitions in semiconductor nanospherical layer under the presence of perturbating electrical field

Abstract

The optical transitions in spherical nanolayer are studied in the “strong” quantization regime. The dependences of threshold frequencies and corresponding intensities of interband and inband–intersubband dipole transitions from the geometrical sizes of the system are obtained. The confinement Stark effect in the layer is considered. Correspondingly, the energy shifts of the radial and orbital motions of charge carriers in the layer and corresponding perturbated envelope single-electron wave functions are calculated under the external homogeneous electrical field. The influence of quantum-confined Stark effect on the interband and intersubband optical transitions in a spherical nanoheterolayer are studied as well. The explicit dependence of the shifts of threshold frequencies from the intensity of external field and from the geometrical sizes of the sample are revealed. The calculations are carried out separately for both cases of perturbation of the radial and orbital motions of charge carriers in the layer. The comparison analysis of corresponding optical absorption shapes in the cases when external field is absent and when it is present is carried out. The quantitative estimations for concrete CdS/HgS/CdS structure are given as well.