Optical transistor and router application of Autler–Townes-splitting in various solid atomic-like media

Abstract

We compare the Autler–Townes (AT)-splitting in E u 3 + : Y P O 4 , P r 3 + : Y P O 4 , and P r 3 + : Y 2 S i O 5 crystals. The AT-splitting in P r 3 + : Y 2 S i O 5 is stronger than other two-doped crystals, while the P r 3 + ion has a stronger dressing than the E u 3 + ion in a host material of YPO. The stronger dressing in YSO is attributed to the C 2 h symmetry of the YSO crystal and its nondegeneracy, making the dressing sensitive to doped material. By investigating the relationship between spectral AT-splitting (SAT-splitting) and temporal AT-splitting (TAT-splitting), we observed that TAT-splitting depends upon the dressing effect and phonon-assisted nonradiative transition whereas SAT-splitting results only from the dressing effect. Based on our results, we proposed a model for an optical router and transistor (amplifier and switch). The router action results from the SAT- and TAT-splitting while the transistor was realized by a switch from bright to dark dressed states.