Abstract
Increasing requirements for quality assurance and process control dictate the need for non-contact, non-destructive film thickness measurements in semiconductor manufacturing. Accurate and repeatable film thickness measurements, ranging from <10 nanometers to 50 micrometers can be achieved with a high resolution reflection spectrophotometer on both patterned and un-patterned wafers. Dedicated measurement techniques are required for thin layer research and Integrated Circuit manufacturing (automatic patterned wafer measurements), coatings on optical elements (layers with minimal differences in refractive index), Compact Discs, Liquid Crystal Displays (measurements on transparent substrates), as well as thick layer measurements on polyimide, resists, etc. Correlation of the measured interference intensity spectrum with the spectrum theoretically calculated from the assumed dispersive optical data of the layer materials can be used to investigate the effect of dispersive changes in the refractive and absorption indices on the measured film thickness.© (1989) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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