Abstract
In recent years, research progress in terahertz devices has affected the development of terahertz communications. In this article, an asymmetric metamaterial coated with the GaAs layer is proposed and numerically demonstrated for terahertz wave optical switching. Based on the Fano resonance of the asymmetric metamaterial, the modulation depth of 80% for Fano peak can obtained by changing the conductivity of the GaAs layer via optical pump. In addition, the modulation mechanism is discussed in detail. Therefore, this work proves the feasibility of the structure and its potential application in ultrafast optical pump terahertz switching.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
