Abstract
In recent years, research progress in terahertz devices has affected the development of terahertz communications. In this article, an asymmetric metamaterial coated with the GaAs layer is proposed and numerically demonstrated for terahertz wave optical switching. Based on the Fano resonance of the asymmetric metamaterial, the modulation depth of 80% for Fano peak can obtained by changing the conductivity of the GaAs layer via optical pump. In addition, the modulation mechanism is discussed in detail. Therefore, this work proves the feasibility of the structure and its potential application in ultrafast optical pump terahertz switching.
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