Abstract
ABSTRACTIn this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.
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