Abstract

In previous years, porous silicon is rapidly attracting increasing interest in various fields and has received a great deal of attention from researchers because of its potential use in a variety of industrial applications such as photovoltaic device applications. The present study conclusively suggested that in order to prepare porous silicon samples, we need to determine the optimal conditions that lead to the increase of the optical efficiency. Porous silicon layers were elaborated by the electrochemical etching method using doped 𝑝-type ⟨100⟩-oriented silicon substrate. The photoluminescence (PL) and the spectroscopic ellipsometry (SE) measurements were used to calculate the physical and optical parameters (porosity, thickness) (refractive index and extinction coefficient). This study can give a very important interest in the photovoltaic field.

Highlights

  • Porous silicon has undergone many developments; it has a very wide field of application and has received a great deal of attention from researchers because of its potential use in a variety of industrial applications such as photovoltaic device applications [1–4], chemical and gas sensors [5–12], biosensors [13, 14], biomedical applications [15], micromachining [16–18], templates for micro- and nanofabrication [19–21], and solar cells and photoluminescence [1, 22, 23]

  • It is reported that the photoluminescence of porous silicon (PS) has achieved a largescale investigation, giving an explanation of the photoluminescence phenomenon with obtaining the optical properties of porous silicon, as well as determining its refractive index and the gap energy, which can be determined directly by the absorption measurement, or by a non-destructive technique called spectroscopic ellipsometry (SE)

  • The study of the evolution of the intensities of the emission spectra obtained by the measurement of PL as a function of the porosity and the thickness determined by the ellipsometry of the layers for silicon substrates oriented P-100 of low resistivity is made to precisely clarify the evolution of optical parameters

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Summary

Introduction

Porous silicon has undergone many developments; it has a very wide field of application and has received a great deal of attention from researchers because of its potential use in a variety of industrial applications such as photovoltaic device applications [1–4], chemical and gas sensors [5–12], biosensors [13, 14], biomedical applications [15], micromachining [16–18], templates for micro- and nanofabrication [19–21], and solar cells and photoluminescence [1, 22, 23]. The study of the evolution of the intensities of the emission spectra obtained by the measurement of PL as a function of the porosity and the thickness determined by the ellipsometry of the layers for silicon substrates oriented P-100 of low resistivity is made to precisely clarify the evolution of optical parameters

Photoluminescence study
Experimental details
Evolution of photoluminescence spectra of P-type porous silicon prepared at different etching time
Study of low temperature photoluminescence
The intensity of PL as a function of the inverse of temperature According to
Ellipsometric spectroscopy measurement
Calculation of the refractive index (n) and the extinction coefficient (k)
Conclusion
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