Abstract
Ga1−xMn x As layers with Mn fractions 0 ≤ x ≤ 2.8 % grown on GaAs(001) substrates by low-temperature molecular beam epitaxy were investigated using micro-Raman spectroscopy and far-infrared (FIR) reflectance spectroscopy. The Raman and FIR spectra are strongly affected by the formation of coupled modes of longitudinal optical phonons and hole plasmons. A full line-shape analysis of the spectra was performed within a Lindhard–Mermin model for the dielectric function, including intraband and interband hole transitions. Annealing at temperatures between 250 and 500°C results in a decrease of the hole density with increasing annealing temperature and total annealing time. Simultaneously, a reduction of the number of Mn atoms on Ga lattice sites is deduced from high-resolution X-ray diffraction. After annealing at 450°C the Raman lines of elemental As are observed, which are due to the precipitation of As on the sample surface.
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