Abstract
Optical constants of amorphous and crystalline Ge (1− x) Sb x films ( x=0.68, 0.73 and 0.84), deposited by sputtering, were calculated from reflectance and transmittance spectra. They have been also calculated during the crystallization process induced by thermal annealing for a wide range of wavelengths. Crystallization induces a semiconductor-to-metal transition. The optical gap, located in the near infrared region for amorphous films, decreases progressively to the absorption edge for Sb interband transitions, disappearing with annealing. The eutectic composition ( x=0.84) shows optical properties characteristic of crystalline Sb and may be considered as a border in Ge (1− x) Sb x behaviour system.
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