Abstract
The modification of the density of surface/interface gap states due to Sb deposition, (NH4)2Sx and Se vapour treatment is investigated by means of photoreflectance (PR) and photoluminescence (PL) experiments. On sulfidized GaAs, the surface states are shifted away from the highly recombination-efficient mid-gap position towards the valence-band edge as deduced from significant changes of band bending ⊘b and surface recombination velocity vS at n- and p-type samples. The Se treatment of n-GaAs yields a decrease of ⊘b as well as vS. The system S/GaAs and Se/GaAs exhibit different interface reactivities proved by PL degradation transient measurements.
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