Abstract
By means of all optical characterizations, carrier dynamics of GaZn–VZn defect complex in Ga doped ZnO film has been systematically studied. It is observed that the defect complex exhibits a red emission centered at 650 nm, different from that of a reference sample containing VO only. From our observations using time-resolved photoluminescence and multiple-wavelength excitation photoluminescence measurements, the energy level of GaZn–VZn is determined to be a two-level system, which is fundamentally different from the reference sample with only a deep level in term of carrier dynamics. This work reveals that GaZn–VZn distinguished from the widely observed VO is a potential candidate for new single photon emitters.
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