Optical studies of self-trapped excitons in SiO2

Abstract

Linear polarisation, with respect to the z axis, and the effect of the subsequent laser-induced excitation on the luminescence and transient optical absorption induced by irradiation of crystalline SiO2 with an electron pulse have been studied. It is found that the luminescence spectrum consists of two bands peaked at 2.8 eV and at 2.5 eV and that the transition dipole moment of the former, which has been shown to be intrinsic, is nearly parallel to the z axis, while that of the latter is parallel to the x axis. In addition to the 5.2 eV transient optical absorption band, a satellite band at 4.2 eV is found to be induced by irradiation with an electron pulse. For both of these bands, the transition dipoles are found not to be parallel to any of the crystalline axes. Subsequent irradiation with a 4.0 or 5.6 eV laser pulse of a specimen irradiated with an electron pulse is found to eliminate both of these transient optical absorption bands and the 2.8 eV luminescence band. In view of previous work on optically detected magnetic resonance and volume changes induced by electron pulse irradiation, it is concluded that the 5.2 and 4.2 eV transient optical absorption bands and the 2.8 eV luminescence band are associated with self-trapped excitons. The existing models of self-trapped excitons are discussed on the basis of the present experimental results.