Abstract
Photoluminescence and capacitance–voltage studies of modulation doped equilibrium quantum dots (QDs) formed by a 4ML InAs deposition in a GaAs matrix by molecular beam epitaxy have been performed. Two electron states are revealed in the n-type modulation-doped structures: due to QDs and due to InAs wetting layer. For the p-type modulation doped QDs the PL peak is shifted to higher energies due to high concentration of holes in a QD, there exist also a significant shift in the characteristic energy for the efficient excitation of the QD ground state, as compared to undoped QDs, which we attribute to the filling of the valence band sublevels with equilibrium holes.
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