Abstract
The two-dimensional electron gas (2DEG) produced by a Si++ focused ion beam implantation into GaAs–AlGaAs quantum well structures grown by molecular beam epitaxy (MBE) has been studied by low temperature (15 K) cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. Ion channeling effects were used and the Si ion activation was optimized during the rapid thermal annealing following the implantation. PL and PLE measurements were first performed in situ the electron microscope together with the CL to evaluate the 2DEG formation in a uniformly implanted pattern. The localized 2DEG created by linear modulation doping (line dose 1.5×108 ions/cm) was imaged, and a local band bending of ∼25 meV was determined from the monochromatic CL line scanning.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
