Abstract
AbstractNeutron‐irradiated Czochralski grown silicon subjected to heat treatment (HT) at 350 °C and 1000 °C under enhanced hydrostatic pressure (HP) was studied in this work. It has been shown that external hydrostatic pressure enhances the creation of VO2 defects in neutron irradiated silicon subjected to the HP ‐ HT treatment at 350 °C. Enhanced formation of platelet‐like oxygen precipitates was found in the samples treated at 1000 °C under 1.1 GPa. This effect was more pronounced in the samples with VO2 defects. Presented results seem to suggest that probably HP helps to transform VO2 to some kind of defects or change alone VO2 defects in the form that can act as an additional nucleus for an additional oxygen precipitation at 1000°C. No correlation between the plate‐like oxygen precipitates related absorption at 1225 cm‐1 and dislocation‐related emission has been confirmed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
