Abstract
We report the use of a rotating light-pipe reflectometer (RLPR) for the in situ optical study of anodic oxide films on GaAs during their growth and dissolution. Different stages in the oxidation process can be easily identified, including electro-etching, island formation, uniform film growth, and oxide dissolution. The dissolution curve is used to determine the dissolution rate as a function of oxide thickness. In addition, the RLPR is used to measure the spectral dependence of the reflectivity of anodized GaAs in situ. Using the reflectivity expression for a three-layer system (i.e., GaAs, oxide, electrolyte) we have been able to fit our data using the previously measured optical constants of the oxide.
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