Abstract
We prepare HfO2 thin films by electron beamevaporation technology. The samples are annealed in air afterdeposition. With increasing annealing temperature, it is found that theabsorption of the samples decreases firstly and then increases. Also,the laser-induced damage threshold (LIDT) increases firstly and thendecreases. When annealing temperature is 473 K, the sample has thehighest LIDT of 2.17 J/cm2, and the lowest absorption of18 ppm. By investigating the optical and structural characteristics andtheir relations to LIDT, it is shown that the principal factordominating the LIDT is absorption.
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