Abstract
Tin doped indium oxide (In2O3:Sn) or indium tin oxide (ITO)thin films have been successfully deposited by the low cost spray-pyrolysismethod. Low sheet resistance and high mobility films were obtained when thefilms were deposited at the substrate temperature of 793 K. The direct opticalbandgaps for the films deposited at 793 (a) and 753 K (b) were found to be3.46 and 3.40 eV, respectively. Similarly, the indirect bandgaps for a- andb-type films were found to be 3.0 and 2.75 eV, respectively. TheBurstein-Moss shift was observed in the films. The refractive index (n) andextinction coefficient (k) were found to be in the range of 2.1 to 1.1 and0.6 to 0.01, respectively. The various scattering mechanisms such as lattice,ionized impurity, neutral impurity, grain boundary and alloy scattering due tovariation of theoretical mobilities with temperature are discussed, in orderto compare experimental results. In the lattice scattering mechanism, thequantum size effect phenomena were employed to estimate the energy dilation(EI). The a-type films exhibited SnO2 as secondary phase whereas b-typefilms showed single phase In2O3:Sn with high sheet resistance. Thelattice constants were found to be 10.16 and 10.09 Å for a- and b-typefilms, respectively.
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