Abstract
Two different structures of AlGaN/InGaN ultraviolet (UV) multiple quantum wells (MQWs) were grown in a metalorganic chemical vapor deposition (MOCVD) system, and their performance under optically pumped stimulated emission were experimentally investigated. During the MOCVD epitaxial growth of the AlGaN/InGaN MQWs, the growth rate of the AlGaN quantum barriers (QBs) was intentionally reduced to improve the surface morphology. Atomic-force microscopy (AFM) images show that the AlGaN QBs have a smooth surface with clear step flow patterns. The surface morphology of InGaN QWs was improved by thermal annealing effect when the growth temperature rose to the one of the AlGaN QBs. With optical confinement layers on both the n- and p-sides, the threshold pumping power density of optical stimulated emission for AlGaN/InGaN MQWs was determined to be 168 kW/cm2. In order to reduce the negative effect of the interface between AlGaN QBs and InGaN QWs, another MQW structure with a larger quantum well thickness was designed and epitaxial grown. The optical investigation of sample B showed a threshold pumping power density of 124 kW/cm2, which is 26% lower than sample A.
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