Optical stability of silicon nitride MIS inversion layer solar cells

Abstract

For MIS inversion layer solar cells with silicon nitride as an AR coating, accelerated optical stress tests were performed. Degradation of the cell characteristics occurred which was found to be caused by photons with energies ≥3.7 eV (λ ≤ 335 nm). Generation of interface states at the silicon-insulator interface by UV light is shown to be the mechanism responsible. The original cell data could be completely restored by heat treatment (activation energy 0.5 eV) and partially by illumination with short wavelength light. As the most striking result, however, it is demonstrated that the UV light-induced instability can be drastically improved by incorporation of cesium ions into the silicon nitride layer. An interpretation is given for this effect.