Abstract
Optical spin–flip excitations in the conduction band of III–V semiconductor heterostructures are considered theoretically taking into account structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) of such systems. Possible spin transitions both in the absence of a magnetic field ( B=0) as well as in the presence of a magnetic field B parallel to the growth direction [0 0 1] are investigated. The theory is based on the three-level model of the narrow-gap band structure including the BIA [Phys. Rev. 100 (1955) 580] and SIA [J. Phys. C. 17 (1984) 6039] contributions. We show in particular that the SIA mechanism not only results in the Bychkov–Rashba spin splitting at B=0 but it also gives rise to the possibility of optical transitions between the two spin-split energy branches.
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