Abstract

Here, we report our results referring to the preparation of Ce doped Y2.22MgGa2Al2SiO12, Y1.93MgAl4SiO12 and Y2.22Gd0.75Ga2Al3O12 using solid state reaction at high temperature. Several complementary methods (i.e. powder x-ray diffraction (XRPD), energy dispersive analysis of X-rays (EDX), scanning electron microscopy (SEM) and Fourier transforms infrared spectroscopy (FTIR)) were studied to examine the effects of the synthesis procedure on the morphology and structure. XRD analyses revealed that all compounds include yttrium aluminate phase with garnet structure. Cathodoluminescence (CL), radioluminescence (RL) and photoluminescence (PL) measurements were carried out for clarification of relationship between host lattice defects and the spectral luminescence emissions. Luminescence emission of phosphors is peaked at 530nm assigned to 5d-4f transitions of the dopant Ce3+ ions with a broad emission band in 400–700nm range. Under electron irradiation, the emission spectrum of Ce doped (YGd)3Ga2Al3O12 is well defined and has a characteristic fairly narrow and sharp emission band peaking at 312nm and 624nm corresponding to transition of 6P7/2 →8S7/2 and 6GJ→6PJ (Gd3+), respectively. We suggest some of phosphors might be excellent phototherapy phosphor materials under electron excitation.

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