Abstract
Results are presented on the photoluminescence (PL) characterizationof heavily doped p+ Czochralski silicon, which has been subjected to atwo-step, oxygen precipitation heat treatment. It will be shown that thepresence of oxygen precipitates gives rise to the D1, D2 and D5 lines, wherethe energy of the D1 line shifts to lower values for a stronger degree ofprecipitation. The occurrence of these PL features is also a function of theboron concentration in the p+ material. The PL results are compared withFourier transform infrared absorption data and with transmission electronmicroscopy results. From this, it is concluded that PL has a good potential foruse in the assessment of oxygen precipitation in heavily doped silicon.
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