Abstract
We have investigated metal-insulator-semiconductor structures fabricated with poly(2,5-dimethoxy- p-phenylene vinylene) as the active semiconductor. In accumulation, we have observed three charge-related absorption features at 0.7eV, 1.7eV and 2.0eV which scale in intensity with the field-induced charge present in the device accumulation layer. We note that the two lower transitions are due to the same state, which can be associated with the presence of long-lived bipolarons, observed in photo-induced absorption. We estimate a value for the optical cross-section associated with the bipolaron absorption at 0.7eV, of around 2 × 10 −15cm 2.
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