Abstract
The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.
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