Abstract
We have studied a series of GaN/Al0.65Ga0.35N samples of varying well and barrier widths by cathodoluminescence and photoluminescence spectroscopy. These samples consist of unstrained GaN quantum wells and strained Al0.65Ga0.35N barriers. Some of the samples exhibit micro-cracks on their surface around which the barriers are partially relaxed and the quantum wells strained. The observation of the quantum well emission under two different strain conditions allows the relative effects of spontaneous polarization and piezoelectric polarization on the emission energies to be compared. We are able to accurately model the emission energies for both strain configurations if we consider the large electric fields present within the quantum wells to be due almost entirely to piezoelectric and field sharing effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
