Abstract
In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optical sensor was fabricated by the electron beam lithography (EBL) technique, and the device current-voltage results showed back-to-back Schottky diode characteristics. The photosensitivity, dark current and the decay time of the sensor were 4 × 104, 31 ms and 0.2 pA, respectively. The high photosensitivity and the short decay time were because of the exponential dependence of photocurrent on the number of the surface charges and the configuration of the back to back Schottky junctions.
Highlights
Semiconductor nanobelts have attracted intensive attention for constructing the new-generation nano optoelectronic devices such as solar cells, light emitting diodes (LED), laser diodes and optical sensors, etc. [1,2,3,4,5]
For optical sensors based on cadmium sulfide (CdS) nanobelts, it is important to form ohmic contact at the metal-semiconductor interface
Energy Dispersive X-ray Spectrum (EDS) of the CdS nanobelt indicated that the nanobelt was composed of cadmium (Cd) and sulfur (S), and the elemental ratio of S and Cd was 0.92
Summary
Semiconductor nanobelts have attracted intensive attention for constructing the new-generation nano optoelectronic devices such as solar cells, light emitting diodes (LED), laser diodes and optical sensors, etc. [1,2,3,4,5]. One-dimensional semiconductor nanostructures based on group IV (Si, Ge) [6,7], group II-VI (ZnO, ZnS, CdS, CdSe, CdSxSe1-x HgTe) [5,8,9,10,11,12], and group III-V (GaN, InN, InP, GaAs AlN) compounds have been developed [13,14,15,16,17] Among these materials, CdS is promising one for visible light detection due to its band gap of 2.4 eV, corresponding to the center of the visible light region, and high photosensitivity [1,18,19]. For optical sensors based on CdS nanobelts, it is important to form ohmic contact at the metal-semiconductor interface
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