Abstract
Optical second harmonic generation (SHG) studies of Sb deposition on clean Si(111) under ultrahigh vacuum conditions are reported. Measurements have been made of the SH intensity in the growth region of zero to one monolayer. Using appropriate choice of polarisation, surface azimuth and excitation wavelength, the second-order nonlinear susceptibility tensor elements X xxx and X zxx are isolated and their magnitude is followed with increasing Sb coverage. The results are compared with the previously studied Si(111)-As and Si(111)-Ga systems.
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