Abstract
It has been observed that only a part of the Al x Ga 1− x As graded-gap layer with the energy gap gradient g>20 eV/cm is active as a X-ray luminescence source. The thickness of the active layer is 30–50 μm. To increase the detectors optical response efficiency, the following methods are proposed and tested: 1. Reflection of the X-ray luminescence light, generated in the bulk Al x Ga 1− x As layer, inside the total reflection angle θ; 2. Optical stimulation of the electron–hole radiative recombination.
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